发明名称 THIN-FILM SEMICONDUCTOR DEVICE, AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To prevent a step-wise disconnection from being generated in the connecting wiring of an upper electrode with a lower electrode, by forming inside the aperture of a first contact hole the aperture of a second contact hole which is present on the side of the lower electrode. SOLUTION: After forming a lower electrode 2 on a glass substrate 1, an interlayer insulation film 3 is formed to cover the lower electrode 2 with it. After boring a first contact hole 4 passing through the film 3 to the lower electrode 2 by a photo-etching in the interlayer insulation film 3, an organic film 5 to be flattened is applied to the film 3 and the lower electrode 2 by a spin-coating method to form the flattened organic film 5. Then, the aperture of the bottom surface of a second contact hole 6 bored in the film 5 is formed inside the first contact hole 4. Subsequently, after forming a transparent conductive film on the hole 6 and the film 5, the transparent conductive film is shaped into a predetermined form by using a photo-etching to form an upper electrode 7 and connect it with the lower electrode 2.
申请公布号 JP2000340652(A) 申请公布日期 2000.12.08
申请号 JP19990152384 申请日期 1999.05.31
申请人 NEC CORP 发明人 KOIKE MASASHI
分类号 H01L21/768;H01L23/522;H01L31/04;(IPC1-7):H01L21/768 主分类号 H01L21/768
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