发明名称 SEMICONDUCTOR ACCELERATION SENSOR AND MANUFACTURE OF THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To obtain the air damping effect by air and to prevent the impairing of yield in accompany with the damping by forming an air hole communicating the inside surrounded by a bonding layer with the external on one of the bonding layer and a stopper. SOLUTION: The main surface side of a single crystal silicon substrate 10 is flattened by spin coatingn an SOG film on the main surfaee side, and the clearance formed on a silicon nitride film on a diffused resistor wiring 15 is buried by the SOG film to flatten a metallic layer for bonding 17, whereby the generation of clearance with respect to an upper stopper is prevented. A single air hole A communicating the inside surrounded by the metallic layer for bonding 17 with the outside, is formed on the metallic layer for bonding 17. Air is filled inside of a sensor tip through the air hole A, whereby the air damping effect can be obtained. In addition, since there is formed only one air hole A, the intrusion of water and chips through the air hole A during dicing can be prevented by the air pressure inside the sensor chip.</p>
申请公布号 JP2000338125(A) 申请公布日期 2000.12.08
申请号 JP19990146615 申请日期 1999.05.26
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 AKAI SUMIO;SAITO HIROSHI;ISHIDA TAKUO;KATAOKA KAZUSHI;KAMI HIRONORI;SAIJO TAKASHI;SAITO MAKOTO
分类号 G01P15/12;G01P15/08;H01L29/84;(IPC1-7):G01P15/12 主分类号 G01P15/12
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