发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND THIN FILM MAGNETIC HEAD
摘要 PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element capable of preventing electrostatic discharge damage or overcurrent damage. SOLUTION: The magnetoresistance effect element 1 has a magnetoresistance effect layer 2, a pair of electrically conductive layers 4, 4 which give an electric current to the magnetoresistance effect layer 2 and current bypass layers 5, 6 laminated on the magnetoresistance effect layer 2. The layers 5, 6 lower their electric resistance and change from an insulator to a conductor when heated to a prescribed temperature. When an overcurrent flows in the magnetoresistance effect layer, the current bypass layers 5, 6 are heated and change from an insulator to a conductor. The overcurrent flowing in the magnetoresistance effect layer 2 is bypassed, the generation of heat in the magnetoresistance effect layer is prevented and electrostatic discharge damage or overcurrent damage is prevented.
申请公布号 JP2000339640(A) 申请公布日期 2000.12.08
申请号 JP19990153103 申请日期 1999.05.31
申请人 ALPS ELECTRIC CO LTD 发明人 KANEKO YOSHIMI
分类号 G11B5/39;H01F10/08;H01F41/32;H01L43/08;(IPC1-7):G11B5/39 主分类号 G11B5/39
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