| 摘要 |
PROBLEM TO BE SOLVED: To increase the breakdown voltage of a gap layer and to improve the yield against breakdown by forming a metal protective film on a second gap layer and removing an oxide layer on the surface of a thin film lead. SOLUTION: A seed second film is formed all over the surface by sputtering. Before sputtering, an oxide layer 24 on a lead second layer 22 is removed by ion milling, and then a resist is formed thereon except for an intermediate shield part and a part to form a conductor. Then an intermediate shield layer 65 and a conductor 66 are grown on the seed film, the resist is removed, and the seed film in an area except for the intermediate shield and the conductor part is removed by ion milling to complete the process to form the intermediate shield. Then the surface is sputtered and flattened by chemical mechanical polishing, and an inductive head is formed thereon. Thus, the ion milling process to remove the oxide layer on the lead second layer is performed after a seed first film is formed.
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