发明名称 BODY CONTACT TYPE DYNAMIC MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a dynamic memory circuit which stores the information bits, using a characteristic bipolar transistor effect in a floating body transistor. SOLUTION: A floating body B of a storage transistor stores the information bits in the form of electric charges. The floating body B is charged or discharged via an access transistor 204 during data write. A characteristic bipolar transistor in a floating body transistor increases the effective capacitance of the floating body, which works as a storage node and thereby increases the intensity of a discharge current during read operation which represents the stored information bits.
申请公布号 JP2000340679(A) 申请公布日期 2000.12.08
申请号 JP20000131777 申请日期 2000.04.28
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 MACDONALD ERIC;MUKHERJEE SUBIR
分类号 G11C11/404;G11C11/405;H01L21/8242;H01L27/102;H01L27/108;H01L27/12;H01L29/786 主分类号 G11C11/404
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