| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, where the parasitic resistance of source and drain regions is reduced and the drop in the threshold is difficult to occur. SOLUTION: A gate electrode 4 is formed on a part of the region of the surface of a semiconductor substrate. First conductivity-type impurity is injected into the sides of the gate electrode 4 with the gate electrode 4 as a mask. The surface of the semiconductor substrate is irradiated with a laser beam, and injected impurity is activated. Impurity for threshold control is injected into the surface layer of the semiconductor substrate, below the gate electrode 4 after the irradiation of the laser beam. The semiconductor substrate is heated, and impurity for threshold control is activated.
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