MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR PRODUCING CRYSTAL STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a colossal magnetoresistance effect crystal structure and a magnetoresistive effect element that can be controlled, and manufacturing method therefor. SOLUTION: A crystal structure having a crystal grain boundary formed at a misorientation angle is formed. The crystal structure comprises a substrate layer 12 and a CMR(colossal magnetoresistive) film layer 10 epitaxially grown on the layer 12. The CMR film layer 10 contains a plurality of first sections and a plurality of second sections with intermediate grain boundaries. A crystallographic axis of the first sections is different from the crystallographic axis of the second sections, and grain boundary contains the crystal grain boundary.