| 摘要 |
PROBLEM TO BE SOLVED: To improve sensitivity by enlarging light receiving area, without degrading smear characteristic and to reduce level differences of pixel areas. SOLUTION: On gate electrodes 9 and 10 and on a silicon oxide film 11 formed on a light-receiving region, a silicon nitride which functions as an etching stopper film 16a is formed through the low pressure CVD method, etc. Next, photolithography is conducted on a CVD silicon oxide film 12 by using a pattern with an outer edge which is identical with that of the gate electrodes 9 and 10 so as to form a resist pattern, which functions as an etching mask, when the CVD silicon oxide film is removed by etching. Then, etching is performed on the CVD silicon oxide film 12, so as to form a groove on which a first light shield film is to be formed. After that, the first light shield film 13 is selectively grown.
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