| 摘要 |
PROBLEM TO BE SOLVED: To increase handling quantity of the vertically transferred resistor of a solid-state image pickup element. SOLUTION: A vertical transfer resistor 114 is formed on an N-type substrate 110, an N-type polycrystalline Si layer 114B is formed on a P-type polycrystalline Si layer 114A, and a transfer electrode 118 of a polycrystalline Si film is provided on the upper surface of the N-type polycrystalline Si layer 114B via an insulating film 142, such as an SiO2 film, etc. By feeding a transfer clock to the transfer electrode part 118, the signal charge in the N-type polycrystalline Si layer 114 is transferred to a horizontal resistor. The insulating film 142 on the upper surface of the N-type polycrystalline Si layer 114B, and the lower surface of the electrode part 118 are formed into almost serration-like waveform having a cross section, consisting of a plurality of crests and troughs, which intersect directly with the direction of transfer of the signal charge. As a result, the contact area of the N-type polycrystalline Si layer 114B and the electrode part 118 can be increased via the insulating layer 142, and the quantity of handling charge is increased.
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