Semiconductor disc with crystal matrix defects has upper and lower surface layers separated by upper and lower internal layers with central region between them having maximum nitrogen concentration

摘要

The semiconductor disc has an upper layer (3) and a lower layer (4) on its opposite sides (1,2), which are separated from one another by upper and lower inner layers (5,6) ,with a central region (7) between them. The latter has a maximum nitrogen concentration, with the nitrogen concentration decreasing uniformly towards the opposing disc surfaces, for non-uniform distribution of the crystal matrix defects, obtained via heating to between 800 and 1300 degrees C for a duration of between 1 and 360 seconds. An Independent claim for a manufacturing method for a semiconductor disc is also included.