DISCRETE SCHOTTKY DIODE DEVICE WITH REDUCED LEAKAGE CURRENT

摘要

A discrete Schottky diode device employing a vertical device structure with current flow between the top and bottom major surfaces of the discrete device. The device employs a large number of commonly connected Schottky barrier regions (18) interspersed with strips of reverse current blocking regions (P). These blocking regions are doped with an opposite conductivity type to the semiconductor substrate in the Schottky barrier regions. Application of a reverse voltage to the device causes the depletion zones from adjacent blocking strips to merge, blocking reverse leakage current. By suitable selection of geometry, spacing and doping of the blocking regions effective blocking of reverse current leakage is provided.