Semiconductor device has copper-tin alloy layer formed on junction portion of solder ball consisting of tin, and wiring consisting of copper

摘要

A copper-tin alloy layer (21) of about 1.87 micron thickness, is formed on the junction portion of tin solder ball (11) and copper wiring (2). The rate of content of tin and lead in solder ball is 63% and 37%, respectively. The wiring is connected to the semiconductor chip. The distributed density per lead lump unit cross section of 3 or more in solder ball, is 20X104> pieces/mm. An independent claim is also included for manufacturing method of semiconductor device.