A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

In a method of manufacturing a semiconductor device, in particular an integrated circuit, in a superficial silicon layer (6) of a wafer, the superficial silicon layer (6) is provided at a surface (5) with a component comprising an area of silicon (16, 17, 18), which area is at least substantially marked by insulating material (15) and covered with a high-resistivity (C49) phase (23) of titanium silicide. The wafer is subjected to a phase transformation anneal to transform the high-resistivity (C49) phase (23) of titanium silicide into a low-resistivity (C54) phase (19) of titanium silicide. In order to promote the transformation of the high-resistivity (C49) phase (23) of titanium silicide into the low-resistivity (C54) phase (19) of titanium silicide, the area is provided with an extension of silicon (4), which extension is at least substantially marked by insulating material and covered with the high-resistivity (C49) phase of titanium silicide (23), the extension (4) being relatively large compared to the area.