Prozess zur Eliminierung von Versetzungen in einem Halsteil eines Siliziumeinkristalles

摘要

A silicon single crystal (10) prepared by the Czochralski method including a neck (14) having an upper portion (22), an intermediate portion (24), and a lower portion (26). The upper portion (22) contains dislocations. The intermediate portion (24) is between the upper (22) and lower (26) portions. A majority of the intermediate (24) and lower (26) portions has a diameter greater than 10 millimeters, and the lower portion (26) is free of dislocations. The crystal (10) also includes an outwardly flaring segment (16) adjacent the lower portion (26) of the neck (14), and a body (20) adjacent the outwardly flaring segment (16).