| 摘要 |
PROBLEM TO BE SOLVED: To form a fine resist pattern, whose section is in a reverse-tapered shape by exposure due to single UV exposure or drawing due to electron beams by depositing metal on the upper surface of a substrate at a side, where a resist film is formed and peeling the metal being deposited on the upper part of the resist film for each resist. SOLUTION: A pattern 3, where the section of a resist that becomes an etching mask for forming a gate electrode, is in a reverse-tapered shape is formed (b). Then, recess etching is made using phosphoric acid liquid through an opening, and a groove 4 is formed on the surface of a substrate (c). A sidewall angle after etching can be controlled by the composition of the etching liquid and etching time at this time. A metal wiring layer for the gate electrode is deposited over the entire surface on the substrate where the groove 4 is formed (d). Then, the resist and an unwanted metal wiring layer on it are eliminated by the lift-off method, while leaving a part that is deposited on the bottom surface of the opening out of the metal wiring layer (e). A part that is deposited on the bottom surface of the opening becomes a gate electrode 5.
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