Heat shield, for a Czochralski single crystal silicon ingot growth apparatus, comprises an internally insulated annular housing with a sloping bottom held within the crucible by a support element

摘要

A Czochralski single crystal growth apparatus heat shield, comprising an internally insulated annular housing with a sloping bottom held within the crucible by a support element, is new. A heat shield, for a Czochralski single crystal silicon ingot growth apparatus, comprises an annular housing which has a sloping housing bottom and a housing lid extending between inner and outer housing walls and which contains an internal insulation material, a support element holding the heat shield within the growth crucible. Independent claims are also included for the following: (i) a Czochralski single crystal silicon ingot growth apparatus equipped with the above heat shield; (ii) a Czochralski single crystal silicon ingot growth apparatus equipped with a heat pack having upper and lower housings containing heat absorbent material; and (iii) a method of modifying a Czochralski growth apparatus for growth of perfect single crystal silicon ingots.