PACKAGE FOR HIGH POWER MICROELECTRONICS

摘要

A package (20) for housing one or more semiconductor devices (22A; 22B) has a base (24) formed of a copper alloy having a fully annealed tensile strength in excess of 40 ksi (276MPa) at room temperature. The package includes a stainless steel ring (34) brazed atop the base with a brazing material having a melting point in excess of 700 DEG C. The combination of the ring and the base at least partially defines a cavity (60) for containing the semiconductor device(s). The cavity has a length and a width each in excess of 2.5 cm.