| 摘要 |
A microwave plasma process device, wherein a metal lattice-shaped shower plate (111) is provided between a dielectric shower plate (103) and a substrate (114), and a plasma exciting gas mainly consisting of rare gases and a processing gas are released from different locations. When the lattice-shaped shower plate is grounded, a high-energy ion can be implanted into the surface of the substrate (114). When the thicknesses of a dielectric partition (102) at a microwave introduction portion and an dielectric are optimized to maximize a plasma exciting efficiency, and, at the same time, the distance between a slot antenna (110) and the dielectric partition (102) and the thickness of the dielectric shower plate (103) are optimized, a high-power microwave can be input.
|
