METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS

摘要

In the step of embedding a wiring in a semiconductor device utilizing a damascene process, the dielectric constant of an insulating film is not increased. Therefore the manufacturing process is simplified. In the step of forming a protective film on a metal layer in the damascene process, a cleaning unit for removing particles adhering to a polished wafer is combined with a processing unit for bringing into contact an organic material, for example, a benzotriazole solution adhering to the metal layer of the wafer from which the particles are removed. The combination of the processing unit and the cleaning unit can be a batch type or single wafer type.