| 摘要 |
<p>An epitaxial growth device (1) comprises a wafer guide (8) including a path (7) communicating with a wafer entrance (5) of a process chamber (2), and a door mechanism (9) for opening and closing the path (7). The door mechanism (9) comprises a door (10) having a body (12) with an annular groove (13) for receiving an O-ring (14), and a cylinder (11) for driving the door (10). The surface (12a) of the body (12) has a rounded edge (15) outside the outer part (13f) of the annular groove (13), so that the edge of the body (12) does not touch the wafer guide (8) when the door (10) is closed.</p> |
