| 发明名称 |
PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
By removing halogen atoms existing on the surface of the silicon layer and in the subsurface thereof so that the concentration of halogen atoms becomes 100ppm or lower and forming an electrode on the resulting silicon layer, the electrode which has a low resistance can be produced, and a highly reliable semiconductor device can be produces as well. <IMAGE> <IMAGE> <IMAGE> |
| 申请公布号 |
EP0928021(A4) |
申请公布日期 |
2000.12.06 |
| 申请号 |
EP19980917666 |
申请日期 |
1998.04.23 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KATAOKA, KOTARO;IWATA, HIROSHI;NAKANO, MASAYUKI |
| 分类号 |
H01L21/28;H01L21/285;H01L21/306;H01L21/3205;H01L21/336;H01L21/60;H01L23/52;H01L29/45;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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