| 摘要 |
In a compound semiconductor surface stabilizing method, a compound semiconductor (1) is immersed in a solution containing sulfur ions, and then, the compound semiconductor is immersed in a solution containing cations, which react with sulfur to form a sulfide. These immersing steps form a sulfur layer (2) and a sulfide layer (4) in this order on a surface of the compound semiconductor (1). <IMAGE> |
