| 摘要 |
<p>Measuring the thickness of an insulating layer on a semiconductor substrate comprises repetitively depositing a fixed charge density on the surface, measuring the change in surface potential of the layer relative to the bulk, and comparing a theoretical band-bending versus bias characteristic with the experimental one, found using the measured change in the surface potential of the insulating layer for each deposited charge, for an assumed thickness value. The assumed value is iteratively incremented until theory and experiment match, giving the actual thickness.</p> |
