| 摘要 |
<p>A magnetoresistance effect element of the present invention includes a structure in which a magnetic layer and a non-magnetic layer containing Cu as a major component are alternately and repeatedly laminated; a magnetoresistance effect film in which a thickness of said non-magnetic layer is set to be near a thickness at which an MR ratio attains a second maximum, said magnetoresistance effect film further satisfying the following conditions; the magnetic layer comprises Co1-xFex (0.05 ≤ x ≤ 0.5); and the magnetic layers are a repetition of a thin magnetic layer and a thick magnetic layer having thicknesses modulated layer by layer with the non-magnetic layer intervening therebetween, and said thin magnetic layer having a thickness within a range from 4.5 ANGSTROM to 8 ANGSTROM . In the magnetoresistance effect element which is used by applying a magnetic field, central magnetic field of which is offset in a specific direction, the magnetoresistance element is initialized in advance in the above-mentioned offset magnetic field direction. The magnetoresistance effect element is subjected to linear patterning, a longitudinal direction of which is perpendicular to a direction of magnetic field change to be detected. Thus, the magnetoresistance effect element, in which MR ratio is large, hysteresis of magnetic field is small and stability under high temperature is attained, can be obtained. <IMAGE></p> |
