发明名称 |
PROCESS FOR THE PREPARATION OF HIGH-PURITY Si AND EQUIPMENT THEREFOR |
摘要 |
<p>It is possible to produce high purity Si by heating solid SiO at a temperature of at least 1000 DEG C and lower than 1730 DEG C, for a disproportionation reaction in which the SiO solid is decomposed to liquid or solid Si and solid SiO2, and the produced Si is separated from the SiO2 and/or SiO. The SiO solid can be obtained by a process whereby a starting mixture of carbon C, silicon Si or ferrosilicon, or a combination thereof, with SiO2 is heated to generate SiO gas-containing gas, and the SiO-containing gas is cooled to produce SiO solid. <IMAGE></p> |
申请公布号 |
EP1057782(A1) |
申请公布日期 |
2000.12.06 |
申请号 |
EP19980961611 |
申请日期 |
1998.12.25 |
申请人 |
NIPPON STEEL CORPORATION |
发明人 |
KONDO, JIRO;SHIMADA, HARUO;TOKUMARU, SHINJI;WATANABE, RYUJI;NOGAMI, ATSUSHI;KIYOSE, AKIHITO |
分类号 |
B01J7/00;B01J12/02;B01J19/00;C01B33/021;C01B33/027;C01B33/037;C01B33/039;(IPC1-7):C01B33/037 |
主分类号 |
B01J7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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