Biasing stage for biasing the drain terminal of a nonvolatile memory cell during the read phase

摘要

The read circuit (50) comprises a biasing stage (12) connected to the memory cell (6) to be read and having the purpose of biasing the drain terminal of the memory cell (6) at a preset operating potential, typically 1 V; and a regulating circuit (52) connected to a supply line (2) set at a supply voltage (VCC) and supplying to the biasing stage (12) a bias current (Ip) which is stable as the temperature and the supply voltage (VCC) vary. <IMAGE>