发明名称 |
METHOD OF IMAGING A MASK PATTERN ON A SUBSTRATE BY MEANS OF EUV RADIATION, AND APPARATUS AND MASK FOR PERFORMING THE METHOD |
摘要 |
An EUV radiation source unit (10) for use in a lithographic projection apparatus to illuminate a mask pattern (22) which is to be projected on a substrate (W) comprises an electron source (12) and a medium in which the electrons of the source generate EUV Cherenkov radiation (PB). The wavelengths of the Cherenkov radiation and the multilayer structure of the mirrors (31-34) of the projection system (30) are adapted to each other, so that these mirrors show a maximum reflectivity. The medium forms part of the mask (MA) so that a mirror condenser system is no longer needed. In this way, an efficient transmission of radiation (PB) from the source to the substrate is obtained. |
申请公布号 |
EP1057078(A1) |
申请公布日期 |
2000.12.06 |
申请号 |
EP19990968795 |
申请日期 |
1999.12.13 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
BRAAT, JOSEPHUS, J., M.;VERHOEVEN, JAN |
分类号 |
G03F1/22;G03F1/24;G03F7/20;G03F7/22;H01L21/027;H05G2/00 |
主分类号 |
G03F1/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|