Deklaagsamenstelling voor een fotobeschermlaag en werkwijze voor het vormen van een fijn patroon door het gebruik ervan.

摘要

An amine contamination-protecting top-coating composition and a process for forming a fine pattern using the same is disclosed. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives which include amino acid derivatives; amide derivatives; urethane compounds including urea; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer with a main chain containing alicyclic derivatives using a light source, such as KrF (248nm), ArF (193nm), F2 (157nm), E-beam, ion beam and extreme ultraviolet (EUV).