METHOD OF FORMING RESIST PATTERN

摘要

PURPOSE: A method for manufacturing a resist pattern is provided to prevent a resist pattern from being warped by patterning the resist pattern twice, and to be adapted to a resist pattern having a high aspect ratio by increasing etch selectivity of the resist layer. CONSTITUTION: A resist layer is applied on a wafer(200). The resist layer is firstly developed for 5-10 seconds to form the first resist pattern(202-1) having the first aspect ratio which is 1/2 to 2/3 of the second aspect ratio. The first resist pattern is secondly developed to form a last resist pattern having the second aspect ratio.