| 摘要 |
In a computer-implemented simulation method for implanting ions into a semiconductor substrate, a region is defined in a vertical cross-section of the substrate between first and second horizontal lines, the first horizontal line being spaced a distance Rp-N sigma from a top surface of the substrate and the second horizontal line being spaced a distance Rp+N sigma from the top surface, where Rp is a projected range of implanted ions from the top surface, N is an integer, and sigma is a standard deviation of horizontal spread of an impurity profile. An orthogonal coordinate system is then defined by a set of narrowly spaced horizontal parallel lines within the region, a set of widely spaced horizontal parallel lines outside of the region and a set of vertical parallel lines at spacing which increases as a function of distance from opposite vertical edges of the coordinate system. A simulation of ion implantation is performed into the substrate and an impurity profile is obtained using the coordinate system. |
