METHOD FOR ETCHING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for etching a semiconductor device is provided to increase integration, by forming an etch mask having an opening region of higher resolution than a maximum resolution of exposure equipment. CONSTITUTION: A photoresist layer is applied on a layer to etch. An exposure and development process is performed regarding the photoresist layer so that the photoresist layer is patterned to have a selective opening region. Silicon is penetrated to the patterned photoresist layer at a pressure scope from 30 torr to 70 torr by using dimethylsilyldiethylanine(DMSDEA) as a medium so that the side surface of the patterned photoresist layer is expanded and the opening region in size is reduced.