METHOD FOR FORMING METAL INTERCONNECTION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to form a plug without a planarization process, by depositing an anti-seed layer on an interlayer dielectric except the inside of a contact hole or via to selectively form a metal layer. CONSTITUTION: An interlayer dielectric(210) is formed on a semiconductor substrate(200) having a conductive pattern. An anti-seed layer(220) is formed on the interlayer dielectric. A contact hole is formed in a predetermined region of the interlayer dielectric and the anti-seed layer to expose the substrate by a photolithography process. A metal layer is selectively formed only on the interlayer dielectric inside the contact hole to form a planarized plug.