METHOD OF MANUFACTURING MULTI-CRYSTALLIZED SILICON THIN FILM

摘要

PURPOSE: A method for manufacturing a polycrystalline silicon thin film is provided to transform an amorphous silicon thin film to the polycrystalline silicon film, by uniformly annealing the amorphous silicon thin film by using a laser beam. CONSTITUTION: An amorphous silicon thin film(3) is patterned by a photolithography process. A SiO2 insulating layer(8) not less than 1000 angstrom is formed by a chemical vapor deposition(CVD) or sputtering method. A metal reflecting layer(7) is formed in a portion of the amorphous silicon thin film of a glass substrate(11) to which an ununiform beam is irradiated. A SiO2 low refraction thin film(12) is formed on the entire surface of the resultant structure. A micro lens(6) is located on both corners of the metal reflecting layer.