METHOD OF FORMING PHOTOSENSITIVE FILM PATTERN IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a photoresist layer pattern of a semiconductor device is provided to prevent a low temperature oxide layer from being degraded and to improve pattern resolution, by performing a low temperature plasma treatment using oxygen gas and argon gas regarding the low temperature oxide layer. CONSTITUTION: A lower resist layer(11) is applied on a semiconductor substrate(10). A low temperature oxide layer is formed on the lower resist layer. A low temperature plasma treatment using argon gas and oxygen gas is performed regarding the low temperature oxide layer. An upper resist pattern is formed on the plasma-processed low temperature oxide layer. The low temperature oxide layer and the lower resist layer are patterned to form a photoresist layer pattern of a multilayered resist by using the upper resist pattern as a mask.