METHOD FOR PATTERNING PHOTORESIST

摘要

PURPOSE: A method for patterning a photoresist layer is provided to improve reliability in a subsequent etch process, by patterning the photoresist layer without a mask to form a vertical profile of a photoresist layer pattern. CONSTITUTION: A substrate(11) is prepared. The first photoresist layer pattern(12) having a predetermined distance is formed on the substrate. An anti-reflecting layer(13) is formed on the substrate between the first photoresist layer patterns. The second photoresist layer is formed on the anti-reflecting layer including the first photoresist layer pattern. An exposure process is performed regarding the second photoresist layer without a mask. The second photoresist layer is developed.