MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve a characteristic and reliability, by completely eliminating photoresist residue used as an ion implantation mask by using a sacrificial oxide layer. CONSTITUTION: A semiconductor substrate(11) where a polysilicon layer(13) for a gate electrode is formed, is prepared. A sacrificial oxide layer(14) is formed on the polysilicon layer. A photoresist pattern(15) is formed on the sacrificial oxide layer. Predetermined impurity ions are implanted into the polysilicon layer by using the photoresist pattern as an ion implantation mask. The photoresist pattern is removed. The sacrificial oxide layer is eliminated.