METHOD FOR FORMING PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a plug of a semiconductor device is provided to reduce contact resistance of metal by minimizing loss of a poly plug in a contact hole, and to improve process margin by improving margin regarding an etch-back process of a polysilicon layer in a unit process. CONSTITUTION: After an insulating layer(22) is formed on a semiconductor substrate(21), the insulating layer is selectively removed to form a contact hole exposing the semiconductor substrate. A polysilicon layer is formed on the entire surface including the contact hole, and a poly plug(24a) is formed in the contact hole by an etch-back process using mixed etching gas of SF6 and HBr. Metal is formed on the entire surface of the semiconductor substrate including the poly plug.