发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD THEREOF
摘要 <p>Described is a method and apparatus for improving planarity of substrates, like semiconductor wafers by chemical and/or mechanical means. The wafer (31) is affixed to the planar surface (32) of a carrier (33). A planar platen (35), on which is mounted a polishing pad (37), is moved about in a plane parallel to the pad surface with either an orbital, fixed-direction vibratory, or random-direction vibratory motion. In one embodiment of the invention, pressure between the surface of the wafer (31) to be polished and the moving polishing pad (37) is generated by the force of gravity acting on at least the wafer (31) and the carrier (33); in another embodiment the pressure is provided by a mechanical force applied normal to the wafer surface. The polishing pad (37) is wetted with a slurry (40) having abrasive particles suspended in a liquid which may be chemically reactive with respect to at least one material on the wafer (31). &lt;IMAGE&gt;</p>
申请公布号 KR100272112(B1) 申请公布日期 2000.12.01
申请号 KR19930021377 申请日期 1993.10.15
申请人 APPLIED MATERIALS INC 发明人 MARKI, TUTL;TRUNTI, DOEON;ANGASSHI;GETIES, SANDHU;HUI, STROWUPE
分类号 B24B1/00;B24B37/10;H01L21/00;H01L21/304;(IPC1-7):H01L21/302 主分类号 B24B1/00
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