SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device having a multi-level interconnection structure is disclosed which includes a metal interconnect wire (2) formed on a surface of an interlayer dielectric film (7) serving as a base; a high-stress TEOS oxide film (5), an SOG film (3), and a low-stress TEOS oxide film (6) which are deposited as interlayer dielectric films; and a contact hole (4), thereby decreasing stresses applied from the interlayer dielectric films to the metal interconnect wire to prevent metal hillocks in the contact hole.