METHOD FOR FORMING METALLIZATION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an interconnection of a semiconductor device is provided to prevent a leakage current and a short circuit between interconnection lines, by forming an amorphous silicon layer after a barrier metal layer is formed in a contact hole, and by eliminating an overhang portion when tungsten is deposited. CONSTITUTION: An insulating layer having a contact hole(13) is formed on a semiconductor substrate(11). A barrier metal layer(14) is formed on the insulating layer including the contact hole. A semiconductor layer is formed on the barrier metal layer. The first conductive layer is formed on the semiconductor layer formed by reaction of SiH4 and WF6 to generate an overhang along the surface of the semiconductor layer. The overhang portion of the first conductive layer is removed by supplying only WF6 while preventing the SiH4 from being supplied. The second conductive layer is formed on the entire surface of the semiconductor layer including the contact hole by supplying WF6 and H2.