PLANARIZATION METHOD OF SEMICONDUCTOR

摘要

PURPOSE: A method for planarizing a semiconductor device is to provide a spin-on-glass(SOG) layer having no crack and to increase a planarization effect of the SOG layer, by performing a cure process regarding the SOG layer by a three-step process having a temperature gradient. CONSTITUTION: A semiconductor substrate(11) having a metal interconnection(13) is prepared. An interlayer dielectric is formed on the entire surface of the semiconductor substrate to cover the metal interconnection. A spin-on-glass(SOG) layer(15) as a planarization layer is applied on the interlayer dielectric. The SOG layer is pre-baked at the first temperature. The SOG layer is heated at the second temperature higher than the first temperature. The SOG layer is heated at the third temperature higher than the second temperature.