发明名称 |
PROCESS OF BACUUM LITHOGRAPHY AND THIN FILM AS RESIST |
摘要 |
PURPOSE: A vacuum lithography process is provided to clean a substrate by a plasma treatment, to form and develop a resist layer by plasma polymerization and plasma etching respectively, and to form a pattern by an electron beam, in a single vacuum chamber. CONSTITUTION: A substrate is cleaned by using a plasma treatment. A resist layer is formed by using plasma polymerization. An electron beam is exposed. The resist layer is developed by using a plasma etching process. The resist layer is stripped. The aforementioned processes are performed in a single chamber.
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申请公布号 |
KR100270908(B1) |
申请公布日期 |
2000.12.01 |
申请号 |
KR19980005105 |
申请日期 |
1998.02.19 |
申请人 |
INHA UNIVERSITY |
发明人 |
LEE, DEOK CHOOL;KIM, SEONG OH |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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