发明名称 PROCESS OF BACUUM LITHOGRAPHY AND THIN FILM AS RESIST
摘要 PURPOSE: A vacuum lithography process is provided to clean a substrate by a plasma treatment, to form and develop a resist layer by plasma polymerization and plasma etching respectively, and to form a pattern by an electron beam, in a single vacuum chamber. CONSTITUTION: A substrate is cleaned by using a plasma treatment. A resist layer is formed by using plasma polymerization. An electron beam is exposed. The resist layer is developed by using a plasma etching process. The resist layer is stripped. The aforementioned processes are performed in a single chamber.
申请公布号 KR100270908(B1) 申请公布日期 2000.12.01
申请号 KR19980005105 申请日期 1998.02.19
申请人 INHA UNIVERSITY 发明人 LEE, DEOK CHOOL;KIM, SEONG OH
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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