发明名称 FORMING METHOD OF DIELECTRIC
摘要 PURPOSE: A method for manufacturing a dielectric layer is provided to improve an operating characteristic and reliability, by reducing a leakage current and increasing electrostatic breakdown voltage. CONSTITUTION: A TiO2 dielectric layer is deposited. Simultaneously, impurities containing a strontium element of which electrovalence is low and ion radius is large, are implanted together with the TiO2 layer so that a dielectric layer having the ratio of Sr/Ti smaller than 1 on an interface is formed. Ti(OC3H7)4 is used as a source material in evaporating the TiO2 dielectric layer.
申请公布号 KR100268921(B1) 申请公布日期 2000.12.01
申请号 KR19970063354 申请日期 1997.11.27
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 JUN, JAE-YEONG;CHOI, SANG-JUN
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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