PATTERN FOR MEASURING LINE WIDTH OF A METAL LINE OF A SEMICONDUCTOR DEVICE AND METHOD FOR MEASURING THE SAME

摘要

PURPOSE: A method for measuring a line width of a metal interconnection of a semiconductor device is provided to measure the line width without measuring resistivity of the metal interconnection, and to perform an effective measurement by simplifying measuring and calculating processes. CONSTITUTION: The second pattern region is connected to the first pattern region to measure, tilted at a predetermined angle and having a line width greater than that of the first pattern region. The third pattern region is connected to the second pattern region, tilted at a predetermined angle and having a line width smaller than that of the first pattern region. Current is supplied through the first and second probes installed on the first and third pattern regions. The first voltage is measured through the third and fourth probes installed on the first pattern region between the first and second probes. The second voltage is measured through the fifth and sixth probes installed on the second pattern region adjacent to the first pattern region. A voltage drop is measured through the first and second voltages, and the line width of the first pattern region is measured by using the following formula. w=(Wxs/S)x(V/v) (w: line width of the first pattern region, W: line width of the second pattern region, s: interval between the third and fourth probes, S: interval between the fifth and sixth probes, v: voltage drop value through the first voltmeter, V: voltage drop value through the second voltmeter).