| 摘要 |
PROBLEM TO BE SOLVED: To perform an ultra-high sensitivity analysis, when analyzing chemically the kinds and quantities of metallic impurities existent on the surface of a semiconductor substrate, by substituting for a conventional acid for decomposing a surface oxidation film an analysis suited acid accompanied by no entrapped contaminant. SOLUTION: An oxide film on the surface of a semiconductor substrate 1 is decomposed completely by a decomposing liquid 2 which includes hydrofluoric acid to recover simultaneously with the decomposition metal impurities. After vaporizing the decomposing liquid 2 by a heating means 3, a dilute nitric acid 5 is dropped on a place 4 of the decomposing liquid 2 being vaporized therefrom. After dissolving again the metal impurities in the dilute nitric acid 5, the liquid drops are recovered to measure the kinds and quantities of the trace amount of metal impurities existent on the surface of the semiconductor substrate 1 by atomic absorption method or inductively coupled plasma/mass spectrometry.
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