Source-Down-Leistungstransistor

摘要

The invention relates to a source-down power transistor in which narrow trenches (11) are provided between a source column (9) and a drain column (10). Said trenches are filled with insulated polysilicon (14). Inversion channels form on the lateral walls of the trenches in the instance of a positive drain voltage and a positive gate voltage. A current that can be controlled by the gate voltage flows inside said inversion channels.