| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method by which a material film containing organic elements can be etched anisotropically without alteration and no carbon fluoride gas is required in consideration of the environmental problem such as global warming. SOLUTION: This manufacturing method is used to etch a material film (a first insulation film 12 and a second insulation film 15) which contains at least silicon, carbon, oxygen, and halogen element and satisfies an equation, 2A+2B<2C+D (assuming that the element ratio of silicon, carbon, oxygen, and halogen element is Si:C:O:Halogen element = A:B:C:D) by using a gas plasma containing at least one kind or a plurality of kinds among carbon monoxide, hydrogen, nitrogen, ammonia, water, and rare gas. The material film is etched by dissolving it by a plasma for gasification.
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