| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein the operation with a single positive power source is possible, high efficiency is realized, and high-frequency characteristic is improved by reducing gate contact resistance, and its manufacturing method. SOLUTION: This semiconductor device is provided with a first carrier supply layer 3a, which is formed on a substrate 1 and composed of semiconductor containing a first conductivity-type impurity, a carrier transit layer 4 which has a band gap narrower than that of the layer 3a and is composed of a semiconductor to which impurities are not added, a second carrier supply layer 5a which is composed of a semiconductor having a band gap wider than that of the layer 4 and contains the first conductivity-type impurity, a barrier layer 6 composed of semiconductor having a band gap narrower than that of the layer 5a, a gate electrode 11, and a first low resistance region 13, which is formed in the barrier layer 6 below the gate electrode 11 and contains a second conductivity-type impurity.
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