| 摘要 |
<p>PROBLEM TO BE SOLVED: To form an n-type cladding layer to flow an operating current over a wide range of a light emitting layers, in a group III nitride semiconductor light emitting device. SOLUTION: An n-type cladding layer 10 is constituted by at least three n-type group III nitride semiconductor layers 3-5 laminated on a buffer layer 2 formed on a substrate crystal. Although there is another method of forming the n-type cladding layer 10 directly on the crystal substrate 1, to improve the flatness and continuity of the group III nitride semiconductor layers 3-5, in the present method, the n-type cladding layer 10 is formed on a low- temperature buffer layer 2 made of aluminum gallium nitride (AlxGa1-xN: 0<=x<=1) or the like. A first n-type conductive layer 3 is formed on a low- temperature buffer layer 2, which is made of a group III nitride semiconductor and formed on the crystal substrate 1, a second n-type conductive layer 4 is formed on the layer 3, and a third n-type conductive layer 5 is formed on the layer 5, and an n-type light emitting layer 6 is formed on the layer 5.</p> |
