| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a magnetic element in which high spin storage effect can be expected by providing semiconductor particles abutting on a second ferromagnetic layer through a second tunnel barrier having conductance different from that of a first tunnel barrier. SOLUTION: A pair of electrodes, i.e., ferromagnetic layers 1, 5, are provided in order to apply a voltage V to a double tunnel junction wherein the ferromagnetic layer 1 has magnetization M1↑in the direction shown by an arrow and the ferromagnetic layer 5 has magnetization M5↑or inverted magnetization M5↓. Two thin dielectric layers 2, 4 are formed as a tunnel barrier between the ferromagnetic layers 1, 5 such that nonmagnetic semiconductor fine particles 3 are sandwiched between. Thickness of the two thin dielectric layers 2, 4 is differentiated in order to impart asymmetry to the tunnel conductance. Consequently, a large variation rate of reluctance can be attained through spin storage effect.</p> |
